Semiconductor device manufacturing method, curable resin composition for temporary fixation material, film for temporary fixation material, and laminated film for temporary fixation material

ABSTRACT

Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.

TECHNICAL FIELD

The present invention relates to a semiconductor device manufacturingmethod, a curable resin composition for a temporary fixation material, afilm for a temporary fixation material, and a laminated film for atemporary fixation material.

BACKGROUND ART

In the field of semiconductor devices, in recent years, technologiesrelated to a package called system in package (SIP), in which aplurality of semiconductor elements is laminated, are significantlygrowing. In a SIP type package, since a large number of semiconductorelements are laminated, there is a demand for thickness reduction in thesemiconductor elements. In response to this demand, in a semiconductorelement, an integrated circuit is incorporated into a semiconductormember (for example, a semiconductor wafer), and then, for example, thesemiconductor member is subjected to processing treatments such asthickness reduction by grinding the rear surface of the semiconductormember, and individualization by dicing the semiconductor wafer. Thesesemiconductor member processing treatments are usually carried out bytemporarily fixing a semiconductor member to a supporting member bymeans of a temporary fixation material layer (see, for example, PatentLiteratures 1 to 3).

The semiconductor member that has been subjected to processingtreatments is strongly fixed to the supporting member, with thetemporary fixation material layer interposed therebetween. Therefore, inthe semiconductor device manufacturing method, it is required that thesemiconductor member after the processing treatments can be separatedfrom the supporting member while damage to the semiconductor member andthe like are prevented. In Patent Literature 1, as a method forseparating such a semiconductor member, a method of physicallyseparating the semiconductor member while heating the temporary fixationmaterial layer is disclosed. Furthermore, in Patent Literatures 2 and 3,methods of separating a semiconductor member by irradiating thetemporary fixation material layer with laser light (coherent light) aredisclosed.

CITATION LIST Patent Literature

-   Patent Literature 1: JP No. 2012-126803-   Patent Literature 2: JP No. 2016-138182-   Patent Literature 3: JP No. 2013-033814

SUMMARY OF INVENTION Technical Problem

However, in the method disclosed in Patent Literature 1, there is aproblem that damage caused by thermal history and the like occur in thesemiconductor wafer, and the product yield is decreased. On the otherhand, the methods disclosed in Patent Literatures 2 and 3 have thefollowing problems: since the laser light is coherent light, the area ofirradiation is narrow, and there is a need to irradiate the entiresemiconductor member repeatedly for several times, it takes much time;since scanning and irradiation are achieved by controlling the focus oflaser light, the process becomes complicated; and highly expensiveapparatuses are needed.

The present invention was achieved in view of such circumstances, and itis an object of the invention to provide a semiconductor devicemanufacturing method, by which a temporarily fixed semiconductor membercan be easily separated from a supporting member. Furthermore, it isanother object of the present invention to provide a curable resincomposition for a temporary fixation material, a film for a temporaryfixation material, and a laminated film for a temporary fixationmaterial, all of which are useful as temporary fixation materials.

Solution to Problem

According to an aspect of the present invention, there is provided asemiconductor device manufacturing method comprising a preparation stepof preparing a laminated body in which a supporting member, a temporaryfixation material layer that generates heat upon absorbing light, and asemiconductor member are laminated in this order, and a separation stepof irradiating the temporary fixation material layer in the laminatedbody with incoherent light and thereby separating the semiconductormember from the supporting member.

A light source for the incoherent light in the separation step may be axenon lamp. The incoherent light in the separation step may be lightincluding at least infrared light.

The separation step may be a step of irradiating the temporary fixationmaterial layer with the incoherent light through the supporting member.

According to an embodiment, the temporary fixation material layer maycontain a cured product of a curable resin composition includingelectroconductive particles that generate heat upon absorbing light.

A content of the electroconductive particles may be 30 to 90 parts bymass with respect to a total amount of 100 parts by mass of componentsother than the electroconductive particles in the curable resincomposition.

The curable resin composition may further include a thermoplastic resin.The curable resin composition may further include a polymerizablemonomer and a polymerization initiator.

According to another embodiment, the temporary fixation material layermay have a light absorbing layer that generates heat upon absorbinglight, and a resin cured product layer including a cured product of acurable resin component.

The light absorbing layer may be formed by sputtering or vacuum vapordeposition.

According to another aspect, the present invention provides a curableresin composition for a temporary fixation material for temporarilyfixing a semiconductor member to a supporting member, the curable resincomposition for a temporary fixation material includingelectroconductive particles that generate heat upon absorbing light.

A content of the electroconductive particles may be 30 to 90 parts bymass with respect to a total amount of 100 parts by mass of componentsother than the electroconductive particles in the curable resincomposition for a temporary fixation material.

The curable resin composition for a temporary fixation material mayfurther include a thermoplastic resin. Furthermore, the curable resincomposition for a temporary fixation material may further include apolymerizable monomer and a polymerization initiator.

Furthermore, the present invention may also relate to the application asa temporary fixation material or the application for the production of atemporary fixation material, of a curable resin composition containingelectroconductive particles that generate heat upon absorbing light.

According to another aspect, the present invention provides a film for atemporary fixation material for temporarily fixing a semiconductormember to a supporting member, the film for a temporary fixationmaterial including the above-described curable resin composition for atemporary fixation material.

Furthermore, according to another aspect, the present invention providesa laminated film for a temporary fixation material for temporarilyfixing a semiconductor member to a supporting member, the laminated filmfor a temporary fixation material having a light absorbing layer thatgenerates heat upon absorbing light, and a resin layer including acurable resin component.

Advantageous Effects of Invention

According to the present invention, there is provided a semiconductordevice manufacturing method by which a temporarily fixed semiconductormember can be easily separated from a supporting member. Furthermore,according to the present invention, a curable resin composition for atemporary fixation material, a film for a temporary fixation material,and a laminated film for a temporary fixation material, all of which areuseful as temporary fixation materials, are provided. The curable resincomposition for a temporary fixation material according to severalembodiments enables the formation of a temporary fixation material layerhaving excellent heat resistance.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic cross-sectional view for describing an embodimentof a semiconductor device manufacturing method of the present invention,and FIGS. 1(a) and 1(b) are schematic cross-sectional views illustratingthe respective steps.

FIG. 2 is a schematic cross-sectional view illustrating an embodiment ofa temporary fixation material precursor layer.

FIGS. 3(a), 3(b), 3(c), and 3(d) are schematic cross-sectional viewsillustrating an embodiment of a laminated body formed using thetemporary fixation material precursor layer illustrated in FIG. 2.

FIG. 4 is a schematic cross-sectional view for describing an embodimentof the semiconductor device manufacturing method of the presentinvention using the laminated body illustrated in FIG. 3(d), and FIGS.4(a) and 4(b) are schematic cross-sectional views illustrating thevarious steps.

FIGS. 5(a), 5(b), and 5(c) are schematic cross-sectional viewsillustrating another embodiment of the temporary fixation materialprecursor layer.

FIGS. 6(a), 6(b), 6(c), and 6(d) are schematic cross-sectional viewsillustrating an embodiment of a laminated body formed using thetemporary fixation material precursor layer illustrated in FIG. 5(a).

FIG. 7 is a schematic cross-sectional view for describing an embodimentof the semiconductor device manufacturing method of the presentinvention using the laminated body illustrated in FIG. 6(d), and FIGS.7(a) and 7(b) are schematic cross-sectional views illustrating thevarious steps.

FIG. 8 is a schematic cross-sectional view for describing anotherembodiment of a method for producing the laminated body illustrated inFIG. 1(a), and FIGS. 8(a), 8(b), and 8(c) are schematic cross-sectionalviews illustrating the various steps.

DESCRIPTION OF EMBODIMENTS

Hereinafter, embodiments of the present invention will be described withappropriate reference to the drawings. However, the present invention isnot intended to be limited to the following embodiments. In thefollowing embodiments, the constituent elements thereof (also includingsteps and the like) are not essential unless particularly statedotherwise. The sizes of the constituent elements in the respectivedrawings are merely conceptual, and the relative relationship betweenthe sizes of the constituent elements is not limited to that illustratedin the respective drawings.

The same also applies to the numerical values and ranges thereof in thepresent specification, and the numerical values and the ranges thereofare not intended to limit the present invention. A numerical value rangeexpressed using “to” in the present specification represents a rangeincluding the numerical values described before and after “to” as theminimum value and the maximum value, respectively. With regard tonumerical value ranges described stepwise in the present specification,the upper limit or lower limit described in one numerical value rangemay be substituted with the upper limit or lower limit of anothernumerical value range described stepwise. Furthermore, with regard to anumerical value range described in the present specification, the upperlimit or lower limit of the numerical value range may be substitutedwith a value shown in the Examples.

In the present specification, (meth)acrylic acid means acrylic acid, ormethacrylic acid corresponding thereto. The same also applies to othersimilar expressions such as (meth)acrylate and (meth)acryloyl group.

[Semiconductor Device Manufacturing Method]

The semiconductor device manufacturing method according to the presentembodiment includes a preparation step of preparing a laminated body inwhich a supporting member, a temporary fixation material layer thatgenerates heat upon absorbing light (hereinafter, may be simply referredto as “temporary fixation material layer”), and a semiconductor memberare laminated in this order, and a separation step of irradiating thetemporary fixation material layer in the laminated body with incoherentlight and thereby separating the semiconductor member from thesupporting member.

<Preparation Step for Laminated Body>

FIG. 1 is a schematic cross-sectional view for describing an embodimentof the semiconductor device manufacturing method of the presentinvention, and FIGS. 1(a) and 1(b) are schematic cross-sectional viewsillustrating the respective steps. As illustrated in FIG. 1(a), in thepreparation step for a laminated body, a laminated body 100 in which asupporting member 10, a temporary fixation material layer 20 c or 30 c,and a semiconductor member 40 are laminated in this order, is prepared.

The supporting member 10 is not particularly limited; however, forexample, the supporting member may be a glass substrate, a resinsubstrate, a silicon wafer, a metal thin film, or the like. Thesupporting member 10 may be any substrate that does not obstructtransmission of light, and may be a glass substrate.

The thickness of the supporting member 10 may be, for example, 0.1 to2.0 mm. When the thickness is 0.1 mm or more, handling tends to becomeeasier, and when the thickness is 2.0 mm or less, there is a tendencythat the material cost can be suppressed.

The temporary fixation material layer 20 c or 30 c is a layer fortemporarily fixing the supporting member 10 and the semiconductor member40, and is a layer that absorbs light when irradiated with light andthen generates heat. The light that is an object of absorption for thetemporary fixation material layer 20 c or 30 c may be light includingany of infrared light, visible light, or ultraviolet light. Thetemporary fixation material layer 20 c or 30 c may include, as will bedescribed below, electroconductive particles that generate heat uponabsorbing light (hereinafter, may be simply referred to as“electroconductive particles”), and may have a light absorbing layerthat generates heat upon absorbing light (hereinafter, may be simplyreferred to as “light absorbing layer”). Since the electroconductiveparticles and the light absorbing layer can efficiently generate heat,the light that is the object of absorption for the temporary fixationmaterial layer 20 c or 30 c may be light including at least infraredlight. Furthermore, the temporary fixation material layer 20 c or 30 cmay be any layer that when absorbs the infrared light irradiated withlight including infrared light, and then generates heat.

The laminated body 100 illustrated in FIG. 1(a) can be produced by, forexample, forming a temporary fixation material precursor layer includinga curable resin component on a supporting member, disposing asemiconductor member on the temporary fixation material precursor layer,curing the curable resin component in the temporary fixation materialprecursor layer, and forming a temporary fixation material layerincluding a cured product of the curable resin component.

(Temporary Fixation Material Precursor Layer: First Embodiment)

The temporary fixation material precursor layer according to anembodiment contains a curable resin composition includingelectroconductive particles that generate heat upon absorbing light.FIG. 2 is a schematic cross-sectional view illustrating an embodiment ofthe temporary fixation material precursor layer. A temporary fixationmaterial precursor layer 20 can be configured to includeelectroconductive particles 22 and a curable resin component 24 asillustrated in FIG. 2. That is, the curable resin composition may be anycomposition containing the electroconductive particles and the curableresin component. The curable resin component 24 may be a curable resincomponent that is cured by heat or light.

The electroconductive particles 22 are not particularly limited as longas the electroconductive particles 22 generate heat upon absorbinglight; however, the electroconductive particles 22 may be any particlesthat generate heat upon absorbing infrared light. The electroconductiveparticles 22 may be, for example, at least one selected from the groupconsisting of silver powder, copper powder, nickel powder, aluminumpowder, chromium powder, iron powder, brass powder, tin powder, atitanium alloy, gold powder, a copper alloy powder, copper oxide powder,silver oxide powder, tin oxide powder, and electroconductive carbonpowder. From the viewpoints of handleability and safety, theelectroconductive particles 22 may also be at least one selected fromthe group consisting of silver powder, copper powder, silver oxidepowder, copper oxide powder, and carbon powder. Furthermore, theelectroconductive particles 22 may be particles having a core formedfrom a resin or a metal and having this core plated with a metal such asnickel, gold, or silver. Moreover, the electroconductive particles 22may be particles having the surface treated with a surface treatmentagent, from the viewpoint of dispersibility in a solvent.

The surface treatment agent may be, for example, a silane couplingagent. Examples of the silane coupling agent include3-glycidoxypropyltrimethoxysilane,3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane,p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane,3-methacryloxypropyltrimethoxysilane,3-methacryloxypropylmethyldiethoxysilane,3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane,N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane,N-2-(aminoethyl)-3-aminopropyltrimethoxysilane,N-2-(aminoethyl)-3-aminopropyltriethoxysilane,3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane,N-phenyl-3-aminopropyltrimethoxysilane,3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane,bis(triethoxypropyl) tetrasulfide, and3-isocyanatopropyltriethoxysilane.

The shape of the electroconductive particles 22 is not particularlylimited and may be a particulate shape, a flat shape, or the like. In acase in which the electroconductive particles 22 are a carbon powder,the electroconductive particles may also be in a particulate form, atubular form, a wire-like form, or the like.

The average particle size of the electroconductive particles 22 may be,for example, 0.1 to 5.0 sm. Here, the average particle size is theparticle size when the ratio (volume fraction) with respect to the totalvolume of the electroconductive particles 22 is 50% (D₅₀). The averageparticle size (D₅₀) of the electroconductive particles 22 is obtained bymeasuring a suspension obtained by suspending a positive electrodeactive material in water by a laser scattering method, using a laserscattering type particle size analyzer (for example, MICROTRAC).

The content of the electroconductive particles 22 may be 30 to 90 partsby mass with respect to a total amount of 100 parts by mass of thecomponents other than the electroconductive particles in the curableresin composition. Meanwhile, the components other than theelectroconductive particles in the curable resin composition do notinclude the solvent that will be described below. The content of theelectroconductive particles 22 may be 35 parts by mass or more, 40 partsby mass or more, or 45 parts by mass or more. When the content of theelectroconductive particles 22 is 30 parts by mass or more with respectto a total amount of 100 parts by mass of the components other than theelectroconductive particles in the curable resin composition, there is atendency that separation from the supporting member can be achieved byirradiation with incoherent light of lower energy. The content of theelectroconductive particles 22 may be 80 parts by mass or less, 70 partsby mass or less, or 60 parts by mass or less. When the content of theelectroconductive particles 22 is 90 parts by mass or less with respectto a total amount of 100 parts by mass of the components other than theelectroconductive particles in the temporary fixation material layer,there is a tendency that flatness of the temporary fixation materiallayer is easily secured.

The curable resin composition may contain a thermoplastic resin, apolymerizable monomer, and a polymerization initiator.

The thermoplastic resin may be a resin having thermoplasticity, or aresin that has thermoplasticity at least in an uncured state and forms acrosslinked structure after being heated. Examples of the thermoplasticresin include an elastomer, a polycarbonate, polyphenylene sulfide, apolyether sulfone, a polyetherimide, a polyimide, a petroleum resin, anda novolac resin. These may be used singly or in combination of two ormore kinds thereof. Among these, from the viewpoints of bumpembedability and low temperature stickability, the thermoplastic resinmay be an elastomer.

Specific examples of the elastomer include an ethylene-propylenecopolymer elastomer, an ethylene-1-butene copolymer elastomer, anethylene-propylene-1-butene copolymer elastomer, an ethylene-1-hexenecopolymer elastomer, an ethylene-1-octene copolymer elastomer, anethylene-styrene copolymer elastomer, an ethylene-norbornene copolymerelastomer, a propylene-1-butene copolymer elastomer, anethylene-propylene-non-conjugated diene copolymer elastomer, anethylene-1-butene-non-conjugated diene copolymer elastomer, anethylene-propylene-1-butene-non-conjugated diene copolymer elastomer,polyisoprene, polybutadiene, a carboxyl group-terminated polybutadiene,a hydroxyl group-terminated polybutadiene, 1,2-polybutadiene, a carboxylgroup-terminated 1,2-polybutadiene, a hydroxyl group-terminated1,2-polybutadiene, acrylic rubber, styrene-butadiene rubber, a hydroxylgroup-terminated styrene-butadiene rubber, acrylonitrile-butadienerubber, an acrylonitrile-butadiene rubber containing a carboxyl group, ahydroxyl group, a (meth)acryloyl group, or a morpholine group at thepolymer terminals, a carboxylated nitrile rubber, a hydroxylgroup-terminated poly(oxypropylene), an alkoxysilyl group-terminatedpoly(oxypropylene), poly(oxytetramethylene) glycol, a polyolefin glycol,and poly-ε-caprolactone. These elastomers may be subjected to ahydrogenation treatment. Among these, the elastomer may be an elastomerincluding a monomer unit derived from styrene.

The Tg of the thermoplastic resin may be −100° C. to 500° C., −50° C. to300° C., or −50° C. to 50° C. When the Tg of the thermoplastic resin is500° C. or lower, flexibility is easily secured at the time of forming afilm-like temporary fixation material, and there is a tendency that thelow temperature stickability can be enhanced. When the Tg of thethermoplastic resin is −100° C. or higher, there is a tendency thatdeterioration of handleability and detachability caused by excessiveincrease in flexibility at the time of forming a film-like temporaryfixation material can be suppressed.

The Tg of the thermoplastic resin is a mid-point glass transitiontemperature obtainable by differential scanning calorimetry (DSC). TheTg of the thermoplastic resin is specifically a mid-point glasstransition temperature calculated according to a method equivalent toJIS K 7121 by measuring the calorific change under the conditions of arate of temperature increase of 10° C./min and a measurement temperatureof −80° C. to 80° C.

The weight average molecular weight (Mw) of the thermoplastic resin maybe 10000 to 5000000 or 100000 to 2000000. When the weight averagemolecular weight is 10000 or more, the heat resistance of the temporaryfixation material layer to be formed tends to be easily secured. Whenthe weight average molecular weight is 5000000 or less, there is atendency that deterioration of flow and deterioration of stickabilityare easily suppressed at the time of forming a film-like temporaryfixation material layer. Meanwhile, the weight average molecular weightis a polystyrene-converted value obtained using a calibration curvebased on standard polystyrene by gel permeation chromatography (GPC).

The content of the thermoplastic resin may be 10 to 90 parts by masswith respect to a total amount of 100 parts by mass of the componentsother than the electroconductive particles in the curable resincomposition. The content of the thermoplastic resin may be 30 parts bymass or more, 50 parts by mass or more, or 70 parts by mass or more, andmay be 88 parts by mass or less, 85 parts by mass or less, or 82 partsby mass or less. When the content of the thermoplastic resin is in theabove-described range, the thin film-formability and flatness of thetemporary fixation material layer tend to be superior.

The polymerizable monomer is not particularly limited as long as it ispolymerized by heating or irradiation with ultraviolet light or thelike. From the viewpoints of the selectivity of material and easyavailability, the polymerizable monomer may be, for example, a compoundhaving a polymerizable functional group such as an ethylenicallyunsaturated group. Examples of the polymerizable monomer include a(meth)acrylate, a halogenated vinylidene, a vinyl ether, a vinyl ester,vinylpyridine, a vinyl amide, and an arylated vinyl. Among these, thepolymerizable monomer may be a (meth)acrylate. The (meth)acrylate may beany of a monofunctional (unifunctional), bifunctional, or trifunctionalor higher-functional (meth)acrylate; however, from the viewpoint ofobtaining sufficient curability, the (meth)acrylate may be abifunctional or higher-functional (meth)acrylate.

Examples of a monofunctional (meth)acrylate include (meth)acrylic acid;aliphatic (meth)acrylates such as methyl (meth)acrylate, ethyl(meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate,tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl(meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate,heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate,decyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl(meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl(meth)acrylate, methoxy polyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxy polypropylene glycol(meth)acrylate, ethoxy polypropylene glycol (meth)acrylate, andmono(2-(meth)acryloyloxyethyl) succinate; and aromatic (meth)acrylatessuch as benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl(meth)acrylate, I-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate,phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate,o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate,2-naphthoxyethyl (meth)acrylate, phenoxy polyethylene glycol(meth)acrylate, nonylphenoxy polyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl(meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate,2-hydroxy-3-(I-naphthoxy)propyl (meth)acrylate, and2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate.

Examples of a bifunctional (meth)acrylate include aliphatic(meth)acrylates such as ethylene glycol di(meth)acrylate, diethyleneglycol di(meth)acrylate, triethylene glycol di(meth)acrylate,tetraethylene glycol di(meth)acrylate, polyethylene glycoldi(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycoldi(meth)acrylate, tripropylene glycol di(meth)acrylate, tetrapropyleneglycol di(meth)acrylate, polypropylene glycol di(meth)acrylate,ethoxylated polypropylene glycol di(meth)acrylate, 1,3-butanedioldi(meth)acrylate, 1,4-butanediol di(meth)acrylate, neopentyl glycoldi(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate,1,6-hexanediol di(meth)acrylate, 2-butyl-2-ethyl-1,3-propanedioldi(meth)acrylate, 1,9-nonanediol di(meth)acrylate, 1,10-decanedioldi(meth)acrylate, glycerin di(meth)acrylate, tricyclodecane dimethanol(meth)acrylate, and ethoxylated 2-methyl-1,3-propanedioldi(meth)acrylate; and aromatic (meth)acrylates such as ethoxylatedbisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylate,ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylatedbisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate,ethoxylated propoxylated bisphenol F di(meth)acrylate, ethoxylatedfluorene type di(meth)acrylate, propoxylated fluorene typedi(meth)acrylate, and ethoxylated propoxylated fluorene typedi(meth)acrylate.

Examples of a polyfunctional (meth)acrylate of trifunctionality orhigher functionality include aliphatic (meth)acrylates such astrimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropanetri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate,ethoxylated propoxylated trimethylolpropane tri(meth)acrylate,pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritoltri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate,ethoxylated propoxylated pentaerythritol tri(meth)acrylate,pentaerythritol tetra(meth)acrylate, ethoxylated pentaerythritoltetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate,ethoxylated propoxylated pentaerythritol tetra(meth)acrylate,ditrimethylolpropane tetraacrylate, and dipentaerythritolhexa(meth)acrylate; and aromatic epoxy (meth)acrylates such as phenolnovolac type epoxy (meth)acrylate and cresol novolac type epoxy(meth)acrylate.

These (meth)acrylates may be used singly or in combination of two ormore kinds thereof. Furthermore, these (meth)acrylates may also be usedin combination with other polymerizable monomers.

The content of the polymerizable monomer may be 10 to 90 parts by masswith respect to a total amount of 100 parts by mass of the componentsother than the electroconductive particles in the curable resincomposition. The content of the polymerizable monomer may be 12 parts bymass or more, 15 parts by mass or more, or 18 parts by mass or more.When the content of the polymerizable monomer is 10 parts by mass ormore with respect to a total amount of 100 parts by mass of thecomponents other than the electroconductive particles in the temporaryfixation material layer, the heat resistance of the temporary fixationmaterial layer tends to be excellent. The content of the polymerizablemonomer may be 70 parts by mass or less, 50 parts by mass or less, or 30parts by mass or less. When the content of the polymerizable monomer is90 parts by mass or less with respect to a total amount of 100 parts bymass of the components other than the electroconductive particles in thecurable resin composition, there is a tendency that detachment, damage,and the like during the processes can be suppressed.

The polymerization initiator is not particularly limited as long as itis an agent that initiates polymerization as a result of heating orirradiation with ultraviolet light or the like. For example, in a casein which a compound having an ethylenically unsaturated group is used asa polymerizable monomer, the polymerizable initiator may be a thermalradical polymerization initiator or a photoradical polymerizationinitiator.

Examples of the thermal radical polymerization initiator include diacylperoxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide,and benzoyl peroxide; peroxy esters such as t-butyl peroxypivalate,t-hexyl peroxypivalate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate,2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexylperoxy-2-ethylhexanoate, t-butyl peroxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-hexyl peroxyisopropyl monocarbonate, t-butylperoxy-3,5,5-trimethylhexanoate, t-butyl peroxylaurylate, t-butylperoxyisopropyl monocarbonate, t-butyl peroxy-2-ethylhexylmonocarbonate, t-butyl peroxybenzoate, t-hexyl peroxybenzoate,2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, and t-butylperoxyacetate; andazo compounds such as 2,2′-azobisisobutyronitrile,2,2′-azobis(2,4-dimethylvaleronitrile), and2,2′-azobis(4-methoxy-2′-dimethylvaleronitrile).

Examples of the photoradical polymerization initiator include benzoinketals such as 2,2-dimethoxy-1,2-diphenylethan-1-one; α-hydroxy ketonessuch as 1-hydroxycyclohexyl phenyl ketone,2-hydroxy-2-methyl-1-phenylpropan-1-one, and1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; andphosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenyl phosphineoxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentyl phosphine oxide,and 2,4,6-trimethylbenzoyl diphenyl phosphine oxide.

These thermal and photoradical polymerization initiators may be usedsingly or in combination of two or more kinds thereof.

The content of the polymerization initiator may be 0.01 to 5 parts bymass with respect to a total amount of 100 parts by mass of thepolymerizable monomer. The content of the polymerization initiator maybe 0.03 parts by mass or more, or 0.05 parts by mass or more. When thecontent of the polymerization initiator is 0.01 parts by mass or morewith respect to a total amount of 100 parts by mass of the polymerizablemonomer, curability is enhanced, and heat resistance tends to becomemore satisfactory. The content of the polymerization initiator may be 3parts by mass or less, 1 part by mass or less, or 0.1 parts by mass orless. When the content of the polymerizable monomer is 5 parts by massor less with respect to a total amount of 100 parts by mass of thepolymerizable monomer, there is a tendency that gas generation duringthe process can be suppressed.

The curable resin composition may further contain, if necessary, athermosetting resin, a curing accelerator, an insulative filler, asensitizer, an oxidation inhibitor, and the like.

The thermosetting resin is not particularly limited as long as it is aresin that is cured by heat. Examples of the thermosetting resin includean epoxy resin, an acrylic resin, a silicone resin, a phenolic resin, athermosetting polyimide resin, a polyurethane resin, a melamine resin,and a urea resin. These may be used singly or in combination of two ormore kinds thereof. Among these, the thermosetting resin may be an epoxyresin since an epoxy resin has superior heat resistance, workability,and reliability. In a case in which an epoxy resin is used as thethermosetting resin, the epoxy resin may be used in combination with anepoxy resin curing agent.

The epoxy resin is not particularly limited as long as it hasheat-resistant action when cured. Examples of the epoxy resin includebifunctional epoxy resins such as a bisphenol A type epoxy; and novolactype epoxy resins such as a phenol novolac type epoxy resin and a cresolnovolac type epoxy resin. Furthermore, the epoxy resin may be apolyfunctional epoxy resin, a glycidylamine type epoxy resin, aheterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin.

Regarding the epoxy resin curing agent, any known curing agent that isconventionally used can be used. Examples of the epoxy resin curingagent include an amine; a polyamide; an acid anhydride; a polysulfide;boron trifluoride; bisphenols each having two or more phenolic hydroxylgroups in one molecule, such as bisphenol A, bisphenol F, and bisphenolS; and phenolic resins such as a phenol novolac resin, a bisphenol Anovolac resin, and a cresol novolac resin.

The content of the thermosetting resin and the curing agent may be 10 to90 parts by mass with respect to a total amount of 100 parts by mass ofthe components other than the electroconductive particles in the curableresin composition. When the content of the thermosetting resin and thecuring agent is in the above-described range, heat resistance tends tobecome more satisfactory.

Examples of the curing accelerator include an imidazole derivative, adicyandiamide derivative, a dicarboxylic acid dihydrazide,triphenylphosphine, tetraphenylphosphonium tetraphenylborate,2-ethyl-4-methylimidazole tetraphenylborate, and1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate. These may be usedsingly or in combination of two or more kinds thereof.

The content of the curing accelerator may be 0.01 to 5 parts by masswith respect to a total amount of 100 parts by mass of the thermosettingresin and the curing agent. When the content of the curing acceleratoris in the above-described range, curability is enhanced, and heatresistance tends to become more satisfactory.

An insulative filler is added for the purpose of imparting low thermalexpandability and low hygroscopic properties to a resin composition.Examples of the insulative filler include non-metal inorganic fillerssuch as silica, alumina, boron nitride, titania, glass, and ceramic.These insulative fillers may be used singly or in combination of two ormore kinds thereof. From the viewpoint of dispersibility in a solvent,the insulative filler may be particles having the surface treated with asurface treatment agent. Regarding the surface treatment agent, agentssimilar to the above-mentioned silane coupling agents can be used.

The content of the insulative filler may be 5 to 20 parts by mass withrespect to a total amount of 100 parts by mass of the components otherthan the electroconductive particles in the curable resin composition.When the content of the insulative filler is in the above-describedrange, heat resistance tends to be further enhanced without obstructinglight transmission. Furthermore, there is also a possibility ofcontributing to light detachability.

Examples of the sensitizer include anthracene, phenanthrene, chrysene,benzopyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene,thioxanthen-9-one, 2-isopropyl-9H-thioxanthen-9-one,4-isopropyl-9H-thioxanthen-9-one, and 1-chloro-4-propoxythioxanthone.

The content of the sensitizer may be 0.01 to 10 parts by mass withrespect to a total amount of 100 parts by mass of the components otherthan the electroconductive particles in the curable resin composition.When the content of the sensitizer is in the above-described range, theinfluence on the characteristics and thin film properties of the curableresin component tends to be small.

Examples of the oxidation inhibitor include quinone derivatives such asbenzoquinone and hydroquinone; phenol derivatives such as4-methoxyphenol and 4-t-butylcatechol; aminoxyl derivatives such as2,2,6,6-tetramethylpiperidin-1-oxyl and4-hydroxy-2,2,6,6-tetramethylpiperidin-1-oxyl; and hindered aminederivatives such as tetramethylpiperidyl methacrylate.

The content of the oxidation inhibitor may be 0.1 to 10 parts by masswith respect to a total amount of 100 parts by mass of the componentsother than the electroconductive particles in the curable resincomposition. When the content of the oxidation inhibitor is in theabove-described range, decomposition of the curable resin component issuppressed, and there is a tendency that contamination can be prevented.

The temporary fixation material precursor layer 20 can be formed from acurable resin composition containing electroconductive particles 22 anda curable resin component 24 (a thermoplastic resin, a polymerizablemonomer, a polymerization initiator, and the like).

The curable resin composition may be used as a varnish of the curableresin composition, which has been diluted with a solvent. The solvent isnot particularly limited as long as the solvent can dissolve componentsother than the electroconductive particles 22 and an insulative filler.Examples of the solvent include aromatic hydrocarbons such as toluene,xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such ashexane and heptane; cyclic alkanes such as methylcyclohexane; cyclicethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone,methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethylacetate, butyl acetate, methyl lactate, ethyl lactate, andγ-butyrolactone; carbonic acid esters such as ethylene carbonate andpropylene carbonate; and amides such as N,N-dimethylformamide,N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These solvents may beused singly or in combination of two or more kinds thereof. Among these,from the viewpoints of solubility and the boiling point, the solvent maybe toluene, xylene, heptane, or cyclohexane.

The solid component concentration in the varnish may be 10% to 80% bymass based on the total mass of the varnish.

The curable resin composition can be prepared by mixing and kneading theelectroconductive particles 22 and the curable resin component 24 (athermoplastic resin, a polymerizable monomer, a polymerizationinitiator, and the like). Mixing and kneading can be carried out byappropriately combining conventional dispersing machines such as astirrer, a Raikai mixer, a three-roll mill, and a bead mill.

The curable resin composition may be formed into a film form. A curableresin composition formed into a film form (hereinafter, may be referredto as “film for a temporary fixation material”) can be formed byapplying the curable resin composition on a supporting film. In the caseof using a varnish of the curable resin composition, which has beendiluted with a solvent, the film for a temporary fixation material canbe formed by applying the curable resin composition on a supporting filmand removing the solvent by heating and drying.

The thickness of the film for a temporary fixation material can beadjusted in accordance with the desired thickness of the temporaryfixation material layer. The thickness of the film for a temporaryfixation material may be 0.1 to 2000 μm (2 mm) or 10 to 500 μm, from theviewpoint of stress relaxation.

The supporting film is not particularly limited, and examples includefilms of polyesters such as polyethylene terephthalate (PET),polybutylene terephthalate, and polyethylene naphthalate; polyolefinssuch as polyethylene and polypropylene; polycarbonate, polyamide,polyimide, polyamideimide, polyetherimide, polyether sulfide, polyethersulfone, polyether ketone, polyphenylene ether, polyphenylene sulfide,poly(meth)acrylate, polysulfone, and a liquid crystal polymer. These maybe subjected to a mold release treatment. The thickness of thesupporting film may be, for example, 3 to 250 μm.

Regarding a method of applying the curable resin composition on asupporting film, for example, a spin coating method, a spraying method,a printing method, a film transfer method, a slit coating method, a scancoating method, an inkjet method, and the like may be mentioned.

The film for a temporary fixation material provided on the supportingfilm may be provided with a protective film, if necessary. Regarding theprotective film, for example, polyesters such as polyethyleneterephthalate, polybutylene terephthalate, and polyethylene naphthalate;polyolefins such as polyethylene and polypropylene; and the like may bementioned. The thickness of the protective film may be, for example, 10to 250 μm.

The film for a temporary fixation material can be easily stored by, forexample, winding into a roll form. Furthermore, a film for a temporaryfixation material in a roll form can also be cut into a suitable sizeinto a sheet form and stored.

The temporary fixation material precursor layer 20 can be formed byapplying the curable resin composition directly on a supporting member10. In the case of using a varnish of the curable resin composition,which has been diluted with a solvent, the temporary fixation materialprecursor layer 20 can be formed by applying the curable resincomposition on the supporting member 10 and removing the solvent byheating and drying.

The method of applying the curable resin composition directly on thesupporting member 10 may be similar to the method of applying thecurable resin composition on a supporting film.

The temporary fixation material precursor layer 20 can also be formed bylaminating the film for a temporary fixation material that has beenproduced in advance, with the supporting member 10. Lamination can becarried out using a roll laminator, a vacuum laminator, or the likeunder predetermined conditions (for example, room temperature (20° C.)or in a heated state).

The thickness of the temporary fixation material precursor layer 20 maybe 0.1 to 2000 μm (0.0001 to 2 mm) or 10 to 500 μm, from the viewpointof stress relaxation.

Temporary Fixation Material Precursor Layer: Second Embodiment

As another embodiment, the temporary fixation material precursor layerhas a light absorbing layer that generates heat upon absorbing light,and a resin layer including a curable resin component. FIGS. 5(a), 5(b),and 5(c) are schematic cross-sectional views illustrating anotherembodiment of the temporary fixation material precursor layer. Regardingthe temporary fixation material precursor layer 30, the configuration isnot particularly limited as long as the configuration has a lightabsorbing layer 32 and a resin layer 34; however, examples include aconfiguration having a light absorbing layer 32 and a resin layer 34 inthis order from the supporting member 10 side (FIG. 5(a)); aconfiguration having a resin layer 34 and a light absorbing layer 32 inthis order from the supporting member 10 side (FIG. 5(b)); aconfiguration having a light absorbing layer 32, a resin layer 34, and alight absorbing layer 32 in this order (FIG. 5(c)); and the like. Amongthese, the temporary fixation material precursor layer 30 may have aconfiguration having a light absorbing layer 32 and a resin layer 34 inthis order from the supporting member 10 side (FIG. 5(a)). In thefollowing description, an embodiment of using a temporary fixationmaterial precursor layer 30 having the configuration illustrated in FIG.5(a) will be mainly described in detail.

An embodiment of the light absorbing layer 32 is a layer formed from anelectrical conductor that generates heat upon absorbing light(hereinafter, may be simply referred to “conductor”) (hereinafter, maybe referred to as “conductor layer”). The conductor that constitutessuch a conductor layer is not particularly limited as long as it is aconductor that generates heat upon absorbing light; however, theconductor may be any conductor that generates heat upon absorbinginfrared light. Examples of the conductor include metals such aschromium, copper, titanium, silver, platinum, and gold; alloys such asnickel-chromium, stainless steel, and copper-zinc; metal oxides such asindium tin oxide (ITO), zinc oxide, and niobium oxide; and carbonmaterials such an electroconductive carbon. These may be used singly orin combination of two or more kinds thereof. Among these, the conductormay be chromium, titanium, copper, aluminum, silver, gold, platinum, orcarbon.

The light absorbing layer 32 may be configured to have a plurality ofconductor layers. Such a light absorbing layer may be, for example, alight absorbing layer configured to include a first conductor layer thatis provided on a supporting member 10, and a second conductor layerprovided on a surface of the first conductor layer, the surface being onthe opposite side of the supporting member 10, or the like. Theconductor in the first conductor layer may be titanium, from theviewpoints of the adhesiveness to the supporting member (for example,glass), film-forming properties, heat conductivity, low heat capacity,and the like. The conductor in the second conductor layer may be copper,aluminum, silver, gold, or platinum from the viewpoints of highcoefficient of expansion, high thermal conduction, and the like, andamong these, the conductor is preferably copper or aluminum.

The light absorbing layer 32 can be formed directly on the supportingmember 10 by subjecting these conductors to physical vapor deposition(PVD) such as vacuum vapor deposition or sputtering, or to chemicalvapor deposition (CVD) such as electroplating, electroless plating, orplasma chemical vapor deposition. Among these, since a conductor layercan be formed in a large area, the conductor layer may be formed usingphysical vapor deposition, or may be formed using sputtering or vacuumvapor deposition.

The thickness of an embodiment of the light absorbing layer 32 may be 1to 5000 nm (0.001 to 5 μm) or 50 to 3000 nm (0.05 to 3 μm), from theviewpoint of light detachability. In a case in which the light absorbinglayer 32 is configured to include a first conductor layer and a secondconductor layer, the thickness of the first conductor layer may be 1 to1000 nm, 5 to 500 nm, or 10 to 100 nm, and the thickness of the secondconductor layer may be 1 to 5000 nm, 10 to 500 nm, or 50 to 200 nm.

Another embodiment of the light absorbing layer 32 is a layer containinga cured product of the curable resin composition includingelectroconductive particles that generate heat upon absorbing light. Thecurable resin composition may be a composition containingelectroconductive particles and a curable resin component. The curableresin component may be a curable resin component that is cured by heator light. The electroconductive particles may be similar to thosementioned above as examples of the electroconductive particles 22. Thecurable resin component is not particularly limited; however, forexample, those mentioned above as examples of the curable resincomponent according to the first embodiment of the temporary fixationmaterial precursor layer may be used.

The content of the electroconductive particles may be 10 to 90 parts bymass with respect to a total amount of 100 parts by mass of thecomponents other than the electroconductive particles in the curableresin composition. Meanwhile, the components other than theelectroconductive particles in the curable resin composition do notinclude the organic solvent that will be described below. The content ofthe electroconductive particles may be 15 parts by mass or more, 20parts by mass or more, or 25 parts by mass or more. The content of theelectroconductive particles may be 80 parts by mass or less or 50 partsby mass or less.

The curable resin composition may contain a thermosetting resin, acuring agent, and a curing accelerator. The content of the thermosettingresin may be 10 to 90 parts by mass with respect to a total amount of100 parts by mass of the components other than the electroconductiveparticles in the curable resin composition. The content of the curingagent and the curing accelerator may be 0.01 to 5 parts by mass withrespect to a total amount of 100 parts by mass of the thermosettingresin.

The light absorbing layer 32 can be formed from a curable resincomposition including electroconductive particles that generate heatupon absorbing light. The curable resin composition may be used as avarnish of the curable resin composition, which has been diluted with anorganic solvent. Examples of the organic solvent include acetone, ethylacetate, butyl acetate, and methyl ethyl ketone (MEK). These organicsolvents may be used singly or in combination of two or more kindsthereof. The solid component concentration in the varnish may be 10% to80% by mass based on the total mass of the varnish.

The light absorbing layer 32 can be formed by applying the curable resincomposition directly on a supporting member 10. In the case of using avarnish of the curable resin composition, which has been diluted with anorganic solvent, the light absorbing layer 32 can be formed by applyingthe curable resin composition on a supporting member 10 and removing thesolvent by heating and drying.

The thickness of another embodiment of the light absorbing layer 32 maybe 1 to 5000 nm (0.001 to 5 μm) or 50 to 3000 nm (0.05 to 3 μm), fromthe viewpoint of light detachability.

Subsequently, a resin layer 34 is formed on the light absorbing layer32.

The resin layer 34 is a layer that does not contain electroconductiveparticles and is a layer that includes a curable resin component that iscured by heat or light. The resin layer 34 may also be a layer formedfrom a curable resin component. The curable resin component is notparticularly limited; however, for example, those mentioned above asexamples of the curable resin component according to the firstembodiment of the temporary fixation material precursor layer may beused. The resin layer 34 can be formed from a curable resin component(curable resin composition that does not include electroconductiveparticles). The curable resin component may be used as a varnish of thecurable resin component, which has been diluted with a solvent. Thesolid component concentration in the varnish may be 10% to 80% by massbased on the total mass of the varnish.

The resin layer 34 can be formed by applying the curable resin componentdirectly on the light absorbing layer 32. In the case of using a varnishof the curable resin component, which has been diluted with a solvent,the resin layer 34 can be formed by applying the curable resin componenton the light absorbing layer 32 and removing the solvent by heating anddrying. Furthermore, the resin layer 34 can also be formed by producinga curable resin component film formed from the curable resin component.

The thickness of the resin layer 34 may be 0.1 to 2000 μm (0.0001 to 2mm) or 10 to 150 μm, from the viewpoint of stress relaxation.

The temporary fixation material precursor layer 30 can also be producedby producing in advance a laminated film having a light absorbing layer32 and a resin layer 34 (hereinafter, may also be referred to as“laminated film for a temporary fixation material”) and laminating thissuch that the light absorbing layer 32 and the supporting member 10 comeinto contact.

Regarding the configuration of the light absorbing layer 32 and theresin layer 34 in the laminated film for a temporary fixation material,the configuration is not particularly limited as long as theconfiguration has a light absorbing layer 32 and a resin layer 34;however, for example, a configuration having a light absorbing layer 32and a resin layer 34, a configuration having a light absorbing layer 32,a resin layer 34, and a light absorbing layer 32 in this order, and thelike may be mentioned. Among these, the laminated film for a temporaryfixation material may have a configuration having a light absorbinglayer 32 and a resin layer 34. The light absorbing layer 32 may be alayer formed from a conductor (conductor layer), or may be a layercontaining electroconductive particles. The laminated film for atemporary fixation material may be provided on the supporting film, ormay have a protective film provided on the surface on the opposite sideof the supporting film, if necessary.

The thickness of the light absorbing layer 32 in the laminated film fora temporary fixation material may be 1 to 5000 nm (0.001 to 5 μm) or 50to 3000 nm (0.05 to 3 μm), from the viewpoint of light detachability.

The thickness of the resin layer 34 in the laminated film for atemporary fixation material may be 0.1 to 2000 μm (0.0001 to 2 mm) or 10to 150 μm, from the viewpoint of stress relaxation.

The thickness of the laminated film for a temporary fixation materialcan be adjusted in accordance with the desired thickness of thetemporary fixation material layer. The thickness of the laminated filmfor a temporary fixation material may be 0.1 to 2000 μm (0.0001 to 2 mm)or 10 to 150 μm, from the viewpoint of stress relaxation.

the temporary fixation material precursor layer 30 having theconfiguration illustrated in FIG. 5(b) can be produced by, for example,forming a resin layer 34 on a supporting member 10 and subsequentlyforming a light absorbing layer 32. The temporary fixation materialprecursor layer 30 having the configuration illustrated in FIG. 5(c) canbe produced by, for example, alternately forming a light absorbing layer32, a resin layer 34, and a light absorbing layer 32 on a supportingmember 10. Such a temporary fixation material precursor layer 30 mayalso be produced by producing in advance a laminated film for atemporary fixation material layer having the above-describedconfiguration and laminating the laminated film with a supporting member10.

Subsequently, a semiconductor member is disposed on the temporaryfixation material precursor layer thus produced, the curable resincomponent in the temporary fixation material precursor layer is cured, atemporary fixation material layer containing a cured product of acurable resin composition including electroconductive particles, or atemporary fixation material layer having a light absorbing layer and aresin cured product layer including a cured product of a curable resincomponent is formed, and thereby a laminated body in which a supportingmember 10, a temporary fixation material layer 20 c or 30 c, and asemiconductor member 40 are laminated in this order is produced (FIG.1(b)). FIGS. 3(a), 3(b), 3(c), and 3(d) are schematic cross-sectionalviews illustrating an embodiment of a laminated body formed using thetemporary fixation material precursor layer illustrated in FIG. 2. FIGS.6(a), 6(b), 6(c), and 6(d) are schematic cross-sectional viewsillustrating an embodiment of the laminated body formed using atemporary fixation material precursor layer illustrated in FIG. 5(a).

The semiconductor member 40 may be a semiconductor wafer or asemiconductor chip obtained by cutting a semiconductor wafer into apredetermined size and individualizing the semiconductor wafer into achip form. In the case of using a semiconductor chip as thesemiconductor member 40, usually, a plurality of semiconductor chips isused. The thickness of the semiconductor member 40 may be 1 to 1000 μm,10 to 500 μm, or 20 to 200 μm, from the viewpoints of size reduction andthickness reduction of the semiconductor device, as well as suppressionof cracking upon conveying, during the processing process, and the like.The semiconductor wafer or the semiconductor chip may be equipped with arewiring layer, a pattern layer, or an external connection member havingan external connection terminal.

The supporting member 10 provided with the temporary fixation materialprecursor layer 20 or 30 thus produced is installed on a vacuum pressmachine or a vacuum laminator, and the semiconductor member 40 can bedisposed by compressing with a press.

In the case of using a vacuum press machine, for example, thesemiconductor member 40 is compressed onto the temporary fixationmaterial precursor layer 20 or 30 at an air pressure of 1 hPa or less, acompression pressure of 1 MPa, a compression temperature of 120° C. to200° C., and a retention time of 100 to 300 seconds.

In the case of using a vacuum laminator, for example, the semiconductormember 40 is compressed onto the temporary fixation material precursorlayer 20 or 30 at an air pressure of 1 hPa or less, a compressiontemperature of 60° C. to 180° C. or 80° C. to 150° C., a laminationpressure of 0.01 to 0.5 Mpa or 0.1 to 0.5 Mpa, and a retention time of 1to 600 seconds or 30 to 300 seconds.

After the semiconductor member 40 is disposed on the supporting member10, with the temporary fixation material precursor layer 20 or 30interposed therebetween, the curable resin component in the temporaryfixation material precursor layer 20 or 30 is thermally cured orphotocured under predetermined conditions. The conditions for thermalcuring may be, for example, 300° C. to lower or 100° C. to 200° C. for 1to 180 minutes or for 1 to 60 minutes. As such, a cured product of thecurable resin component is formed, the semiconductor member 40 istemporary fixed to the supporting member 10, with a temporary fixationmaterial layer 20 c or 30 c including a cured product of the curableresin component interposed therebetween, and thus a laminated body 200or 300 is obtained. The temporary fixation material layer 20 c can beconfigured to include, as illustrated in FIG. 3(a), electroconductiveparticles 22 and a cured product 24 c of the curable resin component.The temporary fixation material layer 30 c can be configured to include,as illustrated in FIG. 6(a), a light absorbing layer 32 and a resincured product layer 34 c including a cured product of the curable resincomponent.

The laminated body can also be produced by, for example, forming atemporary fixation material layer and then disposing a semiconductormember. FIG. 8 is a schematic cross-sectional view for describinganother embodiment of the method for producing a laminated bodyillustrated in FIG. 1(a), and FIGS. 8(a), 8(b), and 8(c) are schematiccross-sectional views illustrating the various steps. The various stepsof FIG. 8 use the temporary fixation material precursor layerillustrated in FIG. 5(a). A laminated body can be produced by forming atemporary fixation material precursor layer 30 including a curable resincomponent on a supporting member 10 (FIG. 8(a)), curing the curableresin component in the temporary fixation material precursor layer 30,forming a temporary fixation material layer 30 c including a curedproduct of the curable resin component (FIG. 8(b)), and disposing asemiconductor member 40 on the temporary fixation material layer 30 cthus formed (FIG. 8(c)). In such a production method, since a wiringlayer 41 such as a rewiring layer or a pattern layer can be provided onthe temporary fixation material layer 20 c before the semiconductormember 40 is disposed, a semiconductor member 40 having the wiring layer41 can be formed by disposing the semiconductor member 40 on the wiringlayer 41.

The semiconductor member 40 (semiconductor member 40 temporarily fixedto the supporting member 10) in the laminated body 100 may be furtherprocessed. By processing the semiconductor member 40 in the laminatedbody 200 illustrated in FIG. 3(a), laminated bodies 210 (FIG. 3(b)), 220(FIG. 3(c)), 230 (FIG. 3(d)), and the like are obtained. By processingthe semiconductor member 40 in the laminated body 300 illustrated inFIG. 6(a), laminated bodies 310 (FIG. 6(b)), 320 (FIG. 6(c)), 330 (FIG.6(d)), and the like are obtained. Processing of the semiconductor memberis not particularly limited; however, thinning of the semiconductormember, production of a penetrating electrode, formation of apenetration electrode, formation of a wiring layer such as a rewiringlayer or a pattern layer, an etching treatment, a plating reflowtreatment, a sputtering treatment, and the like may be mentioned.

Thinning of the semiconductor member can be carried out by grinding asurface of the semiconductor member 40, the surface being on theopposite side of the surface that is in contact with the temporaryfixation material layer 20 c or 30 c, using a grinder or the like. Thethickness of the thinned semiconductor member may be, for example, 100μm or less.

The grinding conditions can be arbitrarily set according to the desiredthickness of the semiconductor member, the grinding state, and the like.

The production of a penetration electrode can be carried out byperforming processing such as dry ion etching or a Bosch process on asurface of the thinned semiconductor member 40, the surface being on theopposite side of the surface that is in contact with the temporaryfixation material layer 20 c or 30 c, forming through-holes, and thensubjecting the semiconductor member 40 to a treatment such as copperplating.

In this way, the semiconductor member 40 is subjected to processing, forexample, the semiconductor member 40 is thinned, and a laminated body210 (FIG. 3(b)) or a laminated body 310 (FIG. 6(b)), both having apenetration electrode 44 provided therein, can be obtained.

The laminated body 210 illustrated in FIG. 3(b) and the laminated body310 illustrated in FIG. 6(b) may be covered with a sealing layer 50 asillustrated in FIG. 3(c) and FIG. 6(c). There are no particularlimitations on the material for the sealing layer 50; however, from theviewpoints of heat resistance as well as reliability, and the like, thematerial may be a thermosetting resin composition. Examples of athermosetting resin to be used for the sealing layer 50 include epoxyresins such as a cresol novolac epoxy resin, a phenol novolac epoxyresin, a biphenyl diepoxy resin, and a naphthol novolac epoxy resin. Inthe composition for forming the sealing layer 50, additives such as afiller and/or a flame-retardant substance such as a bromine compound maybe added thereto.

The supply form of the sealing layer 50 is not particularly limited;however, the supply form may be a solid material, a liquid material, afine granular material, a film material, or the like.

For the sealing of the processed semiconductor member 42 by means of asealing layer 50 formed from a sealing film, for example, a compressionsealing molding machine, a vacuum lamination apparatus, or the like isused. A sealing layer 50 can be formed using the above-describedapparatus, for example, by covering the processed semiconductor member42 with a sealing film that has been heat-melted under the conditions of40° C. to 180° C. (or 60° C. to 150° C.), 0.1 to 10 MPa (or 0.5 to 8MPa), and 0.5 to 10 minutes. The sealing film may be prepared in a stateof being laminated on a release liner such as a polyethyleneterephthalate (PET) film. In this case, the sealing film is disposed onthe processed semiconductor member 42, the processed semiconductormember 42 is embedded therein, subsequently the release liner is peeledoff, and thereby the sealing layer 50 can be formed. In this way, thelaminated body 220 illustrated in FIG. 3(c) or the laminated body 320illustrated in FIG. 6(c) can be obtained.

The thickness of the sealing film is adjusted such that the sealinglayer 50 is thicker than or equal to the thickness of the processedsemiconductor member 42. The thickness of the sealing film may be 50 to2000 μm, 70 to 1,500 μm, or 100 to 1000 μm.

The processed semiconductor member 42 having the sealing layer 50 may beindividualized by dicing, as illustrated in FIG. 3(d) and FIG. 6(d). Inthis way, the laminated body 230 illustrated in FIG. 3(d) or thelaminated body 330 illustrated in FIG. 6(d) can be obtained. Meanwhile,individualization by dicing may be carried out after the separation stepfor the semiconductor member that will be described below.

<Separation Step for Semiconductor Member>

As illustrated in FIG. 1(b), in the separation step for thesemiconductor member, the temporary fixation material layer 20 c or 30 cin the laminated body 100 is irradiated with incoherent light, and thenthe semiconductor member 40 is separated from the supporting member 10.

FIG. 4 is a schematic cross-sectional view for describing an embodimentof the semiconductor device manufacturing method of the presentinvention using the laminated body illustrated in FIG. 3(d), and FIGS.4(a) and 4(b) are schematic cross-sectional views illustrating thevarious steps. FIG. 7 is a schematic cross-sectional view for describingan embodiment of the semiconductor device manufacturing method of thepresent invention using the laminated body illustrated in FIG. 6(d), andFIGS. 7(a) and 7(b) are schematic cross-sectional views illustrating thevarious steps.

When the temporary fixation material layer 20 c or 30 c is irradiatedwith incoherent light, the electroconductive particles 22 or the lightabsorbing layer 32 absorbs light and instantaneously generates heat, andat the interface or in the bulk, melting of the cured product 24 c ofthe curable resin component or the resin cured product layer 34 c causedby heat, stress between the supporting member 10 and the semiconductormember 40 (processed semiconductor member 42), scattering of theelectroconductive particles 22 or the light absorbing layer 32, and thelike can occur. As a result of the occurrence of such phenomena, theprocessed semiconductor member 42 that is temporarily fixed can beeasily separated (detached) from the supporting member 10. Meanwhile, inthe separation step, together with irradiation with incoherent light,stress may be slightly exerted to the processed semiconductor member 42in a direction parallel to the principal plane of the supporting member10.

Incoherent light is electromagnetic waves having properties thatinterference fringes are not generated, coherence is low, anddirectivity is low, and as the optical path length is longer, theincoherent light tends to be attenuated. Incoherent light is a lightthat is not coherent light. While laser light is generally coherentlight, light such as sunlight or fluorescent lamp light is incoherentlight. Incoherent light can be said to be light except for laser light.Since the irradiation area of the incoherent light is overwhelminglylarger than coherent light (that is, laser light), it is possible toreduce the number of times of irradiation (for example, once).

The incoherent light in the separation step may be light including atleast infrared light. The light source for the incoherent light in theseparation step is not particularly limited; however, the light sourcemay be a xenon lamp. A xenon lamp is a lamp that utilizes light emissioncaused by application and discharge in an arc tube having xenon gasenclosed therein. Since a xenon lamp is discharged while ionization andexcitation are repeated, the xenon lamp stably has continuouswavelengths from the ultraviolet light region to the infrared lightregion. In a xenon lamp, since the time required for starting is shortcompared to lamps such as a metal halide lamp, the time related to theprocess can be shortened to a large extent. Furthermore, regarding lightemission, since it is necessary to apply a high voltage, high heat isinstantaneously generated; however, the cooling time is short, and acontinuous operation is enabled. Furthermore, since the irradiation areaof a xenon lamp is overwhelmingly large compared to a laser, it ispossible to reduce the number of times of irradiation (for example,once).

Regarding the conditions for irradiation by a xenon lamp, the voltage tobe applied, the pulse width, the irradiation time, the irradiationdistance (distance between the light source and the temporary fixationmaterial layer), the irradiation energy, and the like can be arbitrarilyset up. Regarding the conditions for irradiation by a xenon lamp,conditions in which separation is enabled by irradiation for once may beset up, or conditions in which separation is enabled by irradiation fortwo or more times may be set up; however, from the viewpoint of reducingdamage to the processed semiconductor member 42, regarding theconditions for irradiation by a xenon lamp, conditions in whichseparation is enabled by irradiation for once may be set up.

The separation step may be a step of irradiation the temporary fixationmaterial layer 20 c or 30 c with incoherent light through the supportingmember 10 (direction A in FIG. 4(a) and FIG. 7(a)), that is, theirradiation of the temporary fixation material layer 20 c or 30 c withincoherent light may be irradiation through the supporting member 10side. By irradiating the temporary fixation material layer 20 c or 30 cwith incoherent light through the supporting member 10, it is possibleto irradiate the entirety of the temporary fixation material layer 20 cor the entirety of the temporary fixation material layer 30 c.

When the semiconductor member 40 or the processed semiconductor member42 is separated from the supporting member 10, in a case in whichresidue 20 c′ (FIGS. 4(a) and (b)) or 30 c′ (FIGS. 7(a) and 7(b)) of thetemporary fixation material layer is adhering to the semiconductormember 40 or the processed semiconductor member 42, these can be washedwith a solvent. The solvent is not particularly limited; however,examples include ethanol, methanol, toluene, xylene, acetone, methylethyl ketone, methyl isobutyl ketone, hexane, and the like. These may beused singly or in combination of two or more kinds thereof. Furthermore,the semiconductor member 40 or the processed semiconductor member 42 maybe immersed in these solvents, or may be subjected to ultrasoniccleaning. Furthermore, the member may also be heated in the range of100° C. or lower.

By separating the semiconductor member from the supporting member assuch, a semiconductor element 60 including the semiconductor member 40or the processed semiconductor member 42 is obtained (FIG. 4(b) and FIG.7(b)). A semiconductor device can be produced by connecting thesemiconductor element 60 thus obtained to another semiconductor elementor a substrate for mounting semiconductor elements.

[Curable Resin Composition for Temporary Fixation Material]

The above-mentioned curable resin composition includingelectroconductive particles that generate heat upon absorbing light canbe suitably used as a temporary fixation material for temporarily fixinga semiconductor member to a supporting member.

The content of the electroconductive particles may be 30 to 90 parts bymass with respect to a total amount of 100 parts by mass of thecomponents other than the electroconductive particles in the curableresin composition. Meanwhile, the components other than theelectroconductive particles in the curable resin composition do notinclude a solvent. The content of the electroconductive particles may be35 parts by mass or more, 40 parts by mass or more, or 45 parts by massor more. The content of the electroconductive particles may be 80 partsby mass or less, 70 parts by mass or less, or 60 parts by mass or less.

The curable resin composition may further include a thermoplastic resin.The content of the thermoplastic resin may be 10 to 90 parts by masswith respect to a total amount of 100 parts by mass of the componentsother than the electroconductive particles in the curable resincomposition. The content of the thermoplastic resin may be 30 parts bymass or more, 50 parts by mass or more, or 70 parts by mass or more. Thecontent of the thermoplastic resin may be 88 parts by mass or less, 85parts by mass or less, or 82 parts by mass or less.

The curable resin composition may further include a polymerizablemonomer and a polymerization initiator. The content of the polymerizablemonomer may be 10 to 90 parts by mass with respect to a total amount of100 parts by mass of the components other than the electroconductiveparticles in the curable resin composition. The content of thepolymerizable monomer may be 12 parts by mass or more, 15 parts by massor more, or 18 parts by mass or more. The content of the polymerizablemonomer may be 70 parts by mass or less, 50 parts by mass or less, or 30parts by mass or less. The content of the polymerization initiator maybe 0.01 to 5 parts by mass with respect to a total amount of 100 partsby mass or the polymerizable monomer. The content of the polymerizationinitiator may be 0.03 parts by mass or more or 0.05 parts by mass ormore. The content of the polymerization initiator may be 3 parts by massor less, 1 part by mass or less, or 0.1 parts by mass or less.

The curable resin composition may be formed into a film form.

[Film for Temporary Fixation Material]

A film including the above-mentioned curable resin composition for atemporary fixation material can be suitably used as a temporary fixationmaterial for temporarily fixing a semiconductor member to a supportingmember.

[Laminated Film for Temporary Fixation Material]

A laminated film having a resin layer including the above-mentionedlight absorbing layer and the resin layer including a curable resincomponent can be suitably used as a temporary fixation material fortemporarily fixing a semiconductor member to a supporting member.

EXAMPLES

Hereinafter, the present invention will be more specifically describedby way of Examples. However, the present invention is not intended to belimited to these Examples.

Examples 1-1 to 1-4 and Comparative Example 1-1 Production Example 1-1

<Preparation of Curable Resin Composition for Temporary FixationMaterial>

80 parts by mass of a hydrogenated styrene-butadiene elastomer (tradename: DYNARON 2324P, JSR Corp., Tg: −50° C.) as a thermoplastic resin,20 parts by mass of 1,9-nonanediol diacrylate (trade name: FA-129AS,Hitachi Chemical Co., Ltd.) as a polymerizable monomer, and 1 part bymass of a peroxy ester (trade name: PERHEXA 250, NOF Corp.) as apolymerization initiator were mixed. Meanwhile, the hydrogenatedstyrene-butadiene elastomer was used after being diluted with toluene toa solid content of 40% by mass. To this, 50 parts by mass ofelectroconductive particles A (copper powder, trade name: 1300Y, MitsuiMining & Smelting Co., Ltd., shape: granular shape, average particlesize (D₅₀): 3.5 μm, tap density: 5.0 g/cm³) was added. A mixture thusobtained was stirred using an automatic stirring apparatus for 10minutes at a rate of 2,200 rotations/min, and thereby a varnish of acurable resin composition for a temporary fixation material includingtoluene as a solvent was obtained.

<Production of Film for Temporary Fixation Material>

The varnish of a curable resin composition for a temporary fixationmaterial thus obtained was applied on a mold release-treated surface ofa polyethylene terephthalate (PET) film (PUREX A31, DuPont Teijin Films,Ltd., thickness: 38 μm) using a precision coating machine, and thesolvent was removed by drying for 10 minutes at 80° C. Thus, a film fora temporary fixation material of Production Example 1-1 having athickness of about 100 μm was produced.

<Production of Laminated Body (Evaluation Sample)>

The film for a temporary fixation material of Production Example 1-1produced as described above was cut into a size of 5 mm×5 mm. A slideglass (size: 15 mm×20 mm, thickness: 1 mm) as a supporting member and asilicon wafer (size: 8 mm×10 mm, thickness: 750 μm) as a semiconductormember were used, the film for a temporary fixation material ofProduction Example 1-1 was interposed between the silicon wafer and theslide glass, and temporary thermocompression bonding was performed usinga thermocompression bonding machine under the conditions of 90° C., 5seconds, and 1 MPa. Subsequently, a temporary fixation material layerwas formed by thermally curing the film in an explosion-proof dryerunder the conditions of 150° C. and 1 hour, and thereby a laminated bodyof Production Example 1-1 was produced.

Production Example 1-2

A film for a temporary fixation material and a laminated body ofProduction Example 1-2 were produced in the same manner as in ProductionExample 1-1, except that the electroconductive particles A were changedto electroconductive particles B (silver powder, trade name: K0082P,Metalor, shape: granular shape, average particle size (D₅₀): 1.5 μm, tapdensity: 5.0 g/cm³).

Production Example 1-3

A film for a temporary fixation material and a laminated body ofProduction Example 1-3 were produced in the same manner as in ProductionExample 1-1, except that the electroconductive particles A were changedto electroconductive particles C (silver powder, trade name: AgC-239,Fukuda Metal Foil & Powder Co., Ltd., shape: flat shape, averageparticle size (Do): 2.0 to 3.4 μm, tap density: 4.2 to 6.1 g/cm³).

Production Example 1-4

A film for a temporary fixation material and a laminated body ofProduction Example 1-4 were produced in the same manner as in ProductionExample 1-1, except that the electroconductive particles A were changedto electroconductive particles D (carbon powder, trade name: MA600,manufactured by Mitsubishi Chemical Corp., shape: granular shape).

Production Example 1-5

A laminated body of Production Example 1-5 was produced in the samemanner as in Production Example 1-1, except that the electroconductiveparticles A were not added.

Examples 1-1 to 1-4 and Comparative Example 1-1

<Detachability Test>

A xenon lamp was used as a light source for incoherent light. Thelaminated bodies of Production Examples 1-1 to 1-5 were irradiated withthe xenon lamp under the irradiation conditions shown in Table 1, anddetachability from the supporting member was evaluated. The temporaryfixation material layer was irradiated through the supporting member(slide glass) of the laminated body, using S2300 (wavelength range: 270nm to near-infrared region, irradiation energy per unit area: 17 J/cm²)manufactured by Xenon Corp. as the xenon lamp. The irradiation distanceis the distance between the light source and the stage where the slideglass is installed. Regarding the evaluation of the detachability test,a case in which the silicon wafer was spontaneously detached from theslide glass after irradiation by the xenon lamp was rated as “A”; a casein which when tweezers were inserted between the silicon wafer and theslide glass, the silicon wafer could be separated without being damagedwas rated as “B”; and a case in which the silicon wafer could not beseparated was rated as “C”. The results are presented in Table 1.

TABLE 1 Number of Applied Pulse Irradiation times of IrradiationLaminated voltage width distance irradiation time body (V) (μs) (mm)(times) (μs) Evaluation Exam. 1-1a Production 3000 5000 10 1 5000 AExam. 1-1b Exam. 1-1 3000 3000 A Exam. 1-2 Production 5000 5000 A Exam.1-2 Exam. 1-3 Production A Exam. 1-3 Exam. 1-4 Production A Exam. 1-4Comp. Production C Exam. 1-1 Exam. 1-5

<Heat Resistance Test>

The laminated bodies of Production Examples 1-1 to 1-5 were heated, andthe adhesiveness between the supporting member and the semiconductormember and the detachability from the supporting member after theheating treatment were evaluated as heat resistance. Heating was carriedout by leaving the laminated bodies of Production Examples 1-1 to 1-5 tostand on a hot plate heated to 260° C. for one hour. Regarding theadhesiveness after the heating treatment, a case in which when tweezerswere inserted between the silicon wafer and the slide glass, the siliconwafer and the slide glass were not separated was rated as “A”; and acase in which the two were separated was rated as “B”. The detachabilityfrom the slide glass after the heating treatment was evaluated similarlyto the above-described detachability test. Irradiation with a xenon lampwas carried out using a xenon lamp similar to that used for theabove-described detachability test, at an applied voltage of 3000 V, apulse width of 5000 μs, an irradiation distance of 10 mm, a number oftimes of irradiation of one time, and an irradiation time of 5000 μs.The results are presented in Table 2.

TABLE 2 Adhesiveness Detachability Laminated after heating after heatingbody treatment treatment Exam. 1-1 Production A A Exam. 1-1 Exam. 1-2Production A A Exam. 1-2 Exam. 1-3 Production A A Exam. 1-3 Exam. 1-4Production A A Exam. 1 -4 Comp. Production A C Exam. 1-1 Exam. 1 -5

From a comparison between Examples 1-1 to 1-4 and Comparative Example1-1, it was found that Examples 1-1 to 1-4 are superior to ComparativeExample 1-1 from the viewpoint of detachability from the supportingmember. Furthermore, it was found that the curable resin compositionsfor temporary fixation of the present invention can form temporaryfixation material layers having excellent heat resistance.

Examples 2-1 and 2-2 and Comparative Example 2-1 Production Example 2-1

<Preparation of Curable Resin Component>

80 parts by mass of a hydrogenated styrene-butadiene elastomer (tradename: DYNARON 2324P, JSR Corp.) as a thermoplastic resin, 20 parts bymass of 1,9-nonanediol diacrylate (trade name: FA-129AS, HitachiChemical Co., Ltd.) as a polymerizable monomer, and 1 part by mass of aperoxy ester (trade name: PERHEXA 250, NOF Corp.) as a polymerizationinitiator were mixed. Meanwhile, the hydrogenated styrene-butadieneelastomer was used after being diluted with toluene to a solid contentof 40% by mass. In this way, a varnish of the curable resin componentincluding toluene as a solvent was prepared.

<Preparation of Curable Resin Composition>

14 parts by mass of an epoxy resin (trade name: EPICLON EXA-4816, DICCorp.), 1 part by mass of a curing agent (trade name: CUREZOL 1B2MZ,Shikoku Chemicals Corp.), 60 parts by mass of electroconductiveparticles E (silver-coated copper powder, trade name: Ag1400VP, MitsuiMining & Smelting Co., Ltd., shape: flat shape), and 25 parts by mass ofan organic solvent (ethyl acetate) were mixed, and thereby a varnish ofa curable resin composition was prepared.

<Production of Laminated Film for Temporary Fixation Material>

The varnish of the curable resin component thus obtained was applied ona mold release-treated surface of a polyethylene terephthalate (PET)film (PUREX A31, DuPont Teijin Films, Ltd., thickness: 38 μm) using aprecision coating machine, the solvent was removed by drying for 10minutes at 80° C., and a resin layer having a thickness of about 100 μmwas produced.

Next, the varnish of the curable resin composition was applied on theresin layer using a precision coating machine, the organic solvent wasremoved by drying for 10 minutes at 80° C., and thereby a lightabsorbing layer having a thickness of 1000 nm was produced. Thereby, alaminated film for a temporary fixation material of Production Example2-1 having a thickness of about 100 μm was obtained.

<Production of Laminated Body (Evaluation Sample)>

The laminated film for a temporary fixation material of Example 2-1produced as described above was cut into a size of 5 mm×5 mm. A slideglass (size: 20 mm×15 mm, thickness: 1 mm) as a supporting member and asilicon wafer (size: 8 mm×10 mm, thickness: 750 μm) as a semiconductormember were used, the laminated film for a temporary fixation materialof Production Example 2-1 was interposed between the silicon wafer andthe slide glass such that the light absorbing layer came into contactwith the slide glass (configuration illustrated in FIG. 5(a)), andtemporary thermocompression bonding was carried out using athermocompression bonding machine under the conditions of 90° C., 5seconds, and 1 MPa. Subsequently, the resultant was thermally cured inan explosion-proof dryer under the conditions of 150° C. and 1 hour, andthereby a laminated body of Production Example 2-1 was produced.

Production Example 2-2

A laminated film for a temporary fixation material and a laminated bodyof Production Example 2-2 were obtained in the same manner as inProduction Example 2-1, except that the light absorbing layer waschanged to a layer configured to include two conductor layers (firstconductor layer: titanium, second conductor layer: copper). Meanwhile,this light absorbing layer was subjected to a preliminary treatment byback sputtering (Ar flow rate: 1.2×10−2 Pa·m³/s (70 sccm), RF power: 300W, time: 300 seconds) and then to RF sputtering under the treatmentconditions shown in Table 3, and the thicknesses of titanium (firstconductor layer)/copper (second conductor layer) were adjusted to 50nm/200 nm.

TABLE 3 Sputtering treatment Ar flow rate Power Treatment 1: 1.2 × 10⁻²Pa · m³/s 2000 W Production of first (70 sccm) conductor layer(titanium) Treatment 2: 1.2 × 10⁻² Pa · m³/s 2000 W Production of second(70 sccm) conductor layer (copper)

Production Example 2-3

A laminated body of Production Example 2-3 was produced in the samemanner as in Production Example 2-1, except that a light absorbing layerwas not provided (that is, including a resin layer only).

Examples 2-1 and 2-2 and Comparative Example 2-1

<Detachability Test>

A xenon lamp was used as a light source for incoherent light. Thelaminated bodies of Production Examples 2-1 to 2-3 were irradiated withthe xenon lamp under the irradiation conditions shown in Table 4, anddetachability from the supporting member was evaluated. The temporaryfixation material layer was irradiated through the supporting member(slide glass) of the laminated body, using S2300 (wavelength range: 270nm to near-infrared region, irradiation energy per unit area: 17 J/cm²)manufactured by Xenon Corp. as the xenon lamp. The irradiation distanceis the distance between the light source and the stage where the slideglass is installed. Regarding the evaluation of the detachability test,a case in which the silicon wafer was spontaneously detached from theslide glass after irradiation by the xenon lamp was rated as “A”; a casein which when tweezers were inserted between the silicon wafer and theslide glass, the silicon wafer could be separated without being damagedwas rated as “B”; and a case in which the silicon wafer could not beseparated was rated as “C”. The results are presented in Table 4.

TABLE 4 Number of Applied Pulse Irradiation times of IrradiationLaminated voltage width distance irradiation time body (V) (μs) (mm)(times) (μs) Evaluation Exam. 2-1a Production 3000 5000 10 1 5000 AExam. 2-1b Exam. 2-1 3000 3000 A Exam. 2-2 Production 5000 5000 A Exam.2-2 Comp. Production C Exam. 2-1 Exam. 2-3

From a comparison between Examples 2-1 and 2-2 and Comparative Example2-1, it was found that Examples 2-1 and 2-2 were superior to ComparativeExample 2-1 from the viewpoint of detachability from the supportingmember.

Examples 3-1 to 3-3 and Comparative Examples 3-1 to 3-3 ProductionExample 3-1

<Production of Evaluation Sample>

The laminated film for a temporary fixation material of Example 2-2produced as described above was cut into a size of 5 mm×5 mm. A slideglass (size: 20 mm×15 mm, thickness: 1 mm) as a supporting member and asilicon wafer (size: 8 mm×10 mm, thickness: 750 μm) as a semiconductormember were used, the laminated film for a temporary fixation materialof Example 2-2 was interposed between the silicon wafer and the slideglass such that the light absorbing layer came into contact with theslide glass (configuration illustrated in FIG. 5(a)), and temporarythermocompression bonding was carried out using a thermocompressionbonding machine under the conditions of 90° C., 5 seconds, and 1 MPa.Subsequently, the resultant was thermally cured in an explosion-proofdryer under the conditions of 150° C. and 1 hour, and thereby alaminated body of Production Example 3-1 was produced.

Production Example 3-2

A laminated body of Production Example 3-2 was produced in the samemanner as in Production Example 3-1, except that the laminated film fora temporary fixation material of Example 2-2 was inserted between thesilicon wafer and the slide glass such that the light absorbing layercomes into contact with the silicon wafer (so as to obtain theconfiguration illustrated in FIG. 5(b)).

Production Example 3-3

On the surface of the laminated film for a temporary fixation materialof Example 2-2 where no light absorbing layer was provided, a secondlight absorbing layer (copper) and a first light absorbing layer(titanium) were further laminated in this order, and thereby a laminatedfilm for a temporary fixation material was produced. Meanwhile, thislight absorbing layer was subjected to a preliminary treatment by backsputtering (Ar flow rate: 1.2×102 Pa·m³/s (70 sccm), RF power: 300 W,time: 300 seconds) similarly to Example 2-2, and then RF sputtering wasperformed under the treatment conditions shown in Table 3. Thethicknesses of titanium/copper were adjusted to 50 nm/200 nm. Alaminated body of Production Example 3-3 was produced in the same manneras in Production Example 3-1, except that the laminated film for atemporary fixation material produced as such was interposed between thesilicon wafer and the slide glass so as to obtain the configurationillustrated in FIG. 5(c).

Examples 3-1 to 3-3

<Detachability Test>

A xenon lamp was used as a light source for incoherent light. Thelaminated bodies of Production Examples 3-1 to 3-3 were irradiated withthe xenon lamp under the irradiation conditions shown in Table 5, anddetachability from the supporting member was evaluated. The temporaryfixation material layer was irradiated through the supporting member(slide glass) of the laminated body, using S2300 (wavelength range: 270nm to near-infrared region, irradiation energy per unit area: 17 J/cm²)manufactured by Xenon Corp. as the xenon lamp. The irradiation distanceis the distance between the light source and the stage where the slideglass is installed. Regarding the evaluation of the detachability test,a case in which the silicon wafer was spontaneously detached from theslide glass after irradiation by the xenon lamp was rated as “A”; a casein which when tweezers were inserted between the silicon wafer and theslide glass, the silicon wafer could be separated without being damagedwas rated as “B”; and a case in which the silicon wafer could not beseparated was rated as “C”. The results are presented in Table 5.

TABLE 5 Number of Applied Pulse Irradiation times of IrradiationLaminated voltage width distance irradiation time body (V) (μs) (mm)(times) (μs) Evaluation Exam. 3-1 Production 3000 5000 10 1 5000 A Exam.3-1 Exam. 3-2 Production A Exam. 3-2 Exam. 3-3 Production A Exam. 3-3

Comparative Examples 3-1 to 3-3

<Detachability Test>

A YAG laser was used as a light source for coherent light. The laminatedbodies of Production Examples 3-1 to 3-3 were irradiated with YAG laserlight, and detachability from the supporting member was evaluated. Thetemporary fixation material layer was irradiated through the supportingmember (slide glass) of the laminated body, using MD-H (wavelength:1,064 nm, power output: 10 W, scan rate: 1000 mm/s) manufactured byKeyence Corp. as the YAG laser. Regarding the evaluation of thedetachability test, a case in which the silicon wafer was spontaneouslydetached from the slide glass after irradiation by the YAG laser wasrated as “A”; a case in which when tweezers were inserted between thesilicon wafer and the slide glass, the silicon wafer could be separatedwithout being damaged was rated as “B”; and a case in which the siliconwafer could not be separated was rated as “C”. The results are presentedin Table 6.

TABLE 6 Laminated body Evaluation Comp. Exam. 3-1 Production Exam. 3-1 CComp. Exam. 3-2 Production Exam. 3-2 C Comp. Exam. 3-3 Production Exam.3-3 C

From a comparison between Examples 3-1 to 3-3 and Comparative Examples3-1 to 3-3, it was found that Examples 3-1 to 3-3 in which a xenon lampgiving incoherent light was used are superior to Comparative Examples3-1 to 3-3 in which a YAG laser giving coherent light, from theviewpoint of detachability.

Examples 4-1 to 4-5 Production Examples 4-1 to 4-5

<Preparation of Curable Resin Component>

70 parts by mass of a hydrogenated styrene-based elastomer (trade name:FG1924, Kraton Polymers Japan, Ltd.) as a thermoplastic resin, 30 partsby mass of a dicyclopentadiene type epoxy resin (trade name: HP-7200H,DIC Corp.) as an epoxy resin, and 2 parts by mass ofI-cyanoethyl-2-phenylimidazole (trade name: CUREZOL 2PZ-CN, ShikokuChemicals Corp.) as a curing accelerator were mixed. Meanwhile, thehydrogenated styrene-based elastomer was used after being diluted withtoluene to a solid content of 25% by mass, and the epoxy resin was usedafter being diluted with toluene to a solid content of 50% by mass.Mixing was performed using a mix rotor, the mixture was stirred for 24hours at a rate of 50 rotations/min, and thereby a varnish of thecurable resin component including toluene as a solvent was prepared.

<Production of Curable Resin Component Film>

The varnish of the curable resin component thus obtained was applied ona mold release-treated surface of a polyethylene terephthalate (PET)film (PUREX A31, DuPont Teijin Films, Ltd., thickness: 38 μm) using aprecision coating machine, the solvent was removed by drying for 10minutes at 80° C., and thus a curable resin component film (resin layer)having a thickness of about 20 μm was produced.

<Production of Laminated Body (Evaluation Sample)>

A slide glass (size: 20 mm×15 mm, thickness: 1 mm) was prepared as asupporting member, a conductor layer having the metal species andthickness shown in Table 7 was produced using a metal vapor depositionapparatus, and this was used as a light absorbing layer. Meanwhile, inthe light absorbing layer, the supporting member, the first conductorlayer, and the second conductor layer were laminated in this order.Next, the above-mentioned curable resin component film was cut into asize of 50 mm×50 mm, and a silicon wafer (size: 8 mm×10 mm, thickness:750 μm) was prepared as a semiconductor member. The curable resincomponent film thus cut was interposed between the light absorbing layerand the slide glass so as to obtain the configuration illustrated inFIG. 5(a), and temporary thermocompression bonding was performed using athermocompression bonding machine under the conditions of 90° C., 5seconds, and 1 MPa. Subsequently, the resultant was thermally cured inan explosion-proof dryer under the conditions of 150° C. and 1 hour, andthereby laminated bodies of Production Examples 4-1 to 4-5 wereproduced.

Examples 4-1 to 4-5

<Detachability Test>

A xenon lamp was used as a light source for incoherent light. Thelaminated bodies of Production Examples 4-1 to 4-5 were irradiated withthe xenon lamp under the irradiation conditions shown in Table 7, anddetachability from the supporting member was evaluated. The temporaryfixation material layer was irradiated through the supporting member(slide glass) of the laminated body, using S2300 (wavelength range: 270nm to near-infrared region, irradiation energy per unit area: 17 J/cm²)manufactured by Xenon Corp. as the xenon lamp. The irradiation distanceis the distance between the light source and the stage where the slideglass is installed. Regarding the evaluation of the detachability test,a case in which the silicon wafer was spontaneously detached from theslide glass after irradiation by the xenon lamp was rated as “A”; a casein which when tweezers were inserted between the silicon wafer and theslide glass, the silicon wafer could be separated without being damagedwas rated as “B”; and a case in which the silicon wafer could not beseparated was rated as “C”. The results are presented in Table 7.

TABLE 7 Light absorbing layer of laminated body (two conductor layers)Number of First conductor layer Second conductor layer Applied PulseIrradiation times of Irradiation Laminated Thickness Thickness voltagewidth distance irradiation time body Type (nm) Type (nm) (V) (μs) (mm)(times) (μs) Evaluation Exam. 4-1a Production Ti 50 Cu 200 2,800 1000 101 1000 B Exam. 4-1b Exam. 4-1 3000 A Exam. 4-2a Production 100 2,800 BExam. 4-2b Exam. 4-2 3000 A Exam. 4-3a Production 50 2,800 A Exam. 4-3bExam. 4-3 3000 A Exam. 4-4 Production Al 200 3000 B Exam. 4-4 Exam. 4-5Production Ag 200 3000 B Exam. 4-5 Light absorbing layer of laminatedbody Number of (single conductor layer) Applied Pulse Irradiation timesof Irradiation Laminated Thickness voltage width distance irradiationtime body Type (nm) (V) (μs) (mm) (times) (μs) Evaluation Exam. 4-6Production Cu 50 3000 1000 10 1 1000 B Exam. 4-6

It was found that Examples 4-1 to 4-5 were all superior from theviewpoint of detachability from the supporting member.

Examples 5-1 to 5-7 Production Examples 5-1 to 5-7

<Preparation of Curable Resin Component>

70 parts by mass of a hydrogenated styrene-based elastomer (trade name:FG1924, Kraton Polymers Japan, Ltd.) as a thermoplastic resin, 30 partsby mass of a dicyclopentadiene type epoxy resin (trade name: HP-7200H,DIC Corp.) as an epoxy resin, and 2 parts by mass of1-cyanoethyl-2-phenylimidazole (trade name: CUREZOL 2PZ-CN, ShikokuChemicals Corp.) as a curing accelerator were mixed. Meanwhile, thehydrogenated styrene-based elastomer was used after being diluted withtoluene to a solid content of 25% by mass, and the epoxy resin was usedafter being diluted with toluene to a solid content of 50% by mass.Mixing was performed using a mix rotor, the mixture was stirred for 24hours at a rate of 50 rotations/min, and thereby a varnish of thecurable resin component including toluene as a solvent was prepared.

<Production of Curable Resin Component Film>

The varnish of the curable resin component thus obtained was applied ona mold release-treated surface of a polyethylene terephthalate (PET)film (PUREX A31, DuPont Teijin Films, Ltd., thickness: 38 μm) using aprecision coating machine, the solvent was removed by drying for 10minutes at 80° C., and thus a curable resin component film (resin layer)having a thickness of about 20 μm was produced.

<Production of Laminated Body (Evaluation Sample)>

A slide glass (size: 20 mm×15 mm, thickness: 1 mm) was prepared as asupporting member, a conductor layer having the metal species andthickness shown in Table 8 was produced by sputtering, and this was usedas a light absorbing layer. Meanwhile, this light absorbing layer wassubjected to a preliminary treatment by back sputtering (Ar flow rate:1.2×10⁻² Pa·m³/s (70 sccm), RF power: 300 W, time: 300 seconds)similarly to Example 2-2, and then RF sputtering was performed under thetreatment conditions shown in Table 3. For a light absorbing layerhaving two conductor layers, a supporting member, a first conductorlayer, and a second conductor layer were laminated in this order. Next,the above-mentioned curable resin component film was cut into a size of50 mm×50 mm, and a silicon wafer (size: 8 mm×10 mm, thickness: 750 μm)was prepared as a semiconductor member. The curable resin component filmthus cut was interposed between the light absorbing layer and the slideglass so as to obtain the configuration illustrated in FIG. 5(a), andtemporary thermocompression bonding was carried out using athermocompression bonding machine under the conditions of 90° C., 5seconds, and 1 MPa. Subsequently, the resultant was thermally cured inan explosion-proof dryer under the conditions of 150° C. and 1 hour, andthereby laminated bodies of Examples 5-1 to 5-7 were produced.

Examples 5-1 to 5-7

<Detachability Test>

A xenon lamp was used as a light source for incoherent light. Thelaminated bodies of Production Examples 5-1 to 5-7 were irradiated withthe xenon lamp under the irradiation conditions shown in Table 8, anddetachability from the supporting member was evaluated. The temporaryfixation material layer was irradiated through the supporting member(slide glass) of the laminated body, using S2300 (wavelength range: 270nm to near-infrared region, irradiation energy per unit area: 17 J/cm²)manufactured by Xenon Corp. as the xenon lamp. The irradiation distanceis the distance between the light source and the stage where the slideglass is installed. Regarding the evaluation of the detachability test,a case in which the silicon wafer was spontaneously detached from theslide glass after irradiation by the xenon lamp was rated as “A”; a casein which when tweezers were inserted between the silicon wafer and theslide glass, the silicon wafer could be separated without being damagedwas rated as “B”; and a case in which the silicon wafer could not beseparated was rated as “C”. The results are presented in Table 8.

TABLE 8 Light absorbing layer of laminated body (two conductor layers)Number of First conductor layer Second conductor layer Applied PulseIrradiation times of Irradiation Laminated Thickness Thickness voltagewidth distance irradiation time body Type (nm) Type (nm) (V) (μs) (mm)(times) (μs) Evaluation Exam. 5-1a Production Ti 50 Cu 200 4000 orhigher 200 50 1 200 A Exam. 5-1b Exam. 5-1 3800 B Exam. 5-1c 3700 BExam. 5-2a Production Al 200 4000 or higher A Exam. 5-2b Exam. 5-2 3800A Exam. 5-2c 3700 B Exam. 5-3a Production Ag 200 4000 or higher A Exam.5-3b Exam. 5-3 3800 B Exam. 5-4a Production Au 200 4000 or higher BExam. 5-4b Exam. 5-4 3800 B Exam. 5-5a Production Pt 200 4000 or higherB Exam. 5-5b Exam. 5-5 3800 B Light absorbing layer of laminated bodyNumber of (single conductor layer) Applied Pulse Irradiation times ofIrradiation Laminated Thickness voltage width distance irradiation timebody Type (nm) (V) (μs) (mm) (times) (μs) Evaluation Exam. 5-6Production Ti 200 4000 or higher 200 50 1 200 B Exam. 5-6 Exam. 5-7Production Cu 200 4000 or higher B Exam. 5-7

It was found that Examples 5-1 to 5-7 were all superior from theviewpoint of detachability from the supporting member.

From the above-described results, it was verified that the semiconductordevice manufacturing method of the present invention can easily separatea temporarily fixed semiconductor member from a supporting member.

REFERENCE SIGNS LIST

10: supporting member, 20: temporary fixation material precursor layer,20 c: temporary fixation material layer, 20 c′: residue of temporaryfixation material layer, 22: electroconductive particles, 24: curableresin component, 24 c: cured product of curable resin component, 30:temporary fixation material precursor layer, 30 c: temporary fixationmaterial layer, 30 c′: residue of temporary fixation material layer, 32:light absorbing layer, 34: resin layer, 34 c: resin cured product layer,40: semiconductor member, 41: wiring layer, 42: processed semiconductormember, 44: penetration electrode, 50: sealing layer, 60: semiconductorelement, 100, 200, 210, 220, 230, 300, 310, 320, 330: laminated body.

1. A semiconductor device manufacturing method, the method comprising: apreparation step of preparing a laminated body in which a supportingmember, a temporary fixation material layer that generates heat uponabsorbing light, and a semiconductor member are laminated in this order;and a separation step of irradiating the temporary fixation materiallayer in the laminated body with incoherent light and thereby separatingthe semiconductor member from the supporting member.
 2. Thesemiconductor device manufacturing method according to claim 1, whereina light source for the incoherent light in the separation step is axenon lamp.
 3. The semiconductor device manufacturing method accordingto claim 1, wherein the incoherent light in the separation step is lightincluding at least infrared light.
 4. The semiconductor devicemanufacturing method according to claim 1, wherein the separation stepis a step of irradiating the temporary fixation material layer with theincoherent light through the supporting member.
 5. The semiconductordevice manufacturing method according to claim 1, wherein the temporaryfixation material layer contains a cured product of a curable resincomposition including electroconductive particles that generate heatupon absorbing light.
 6. The semiconductor device manufacturing methodaccording to claim 5, wherein a content of the electroconductiveparticles is 30 to 90 parts by mass with respect to a total amount of100 parts by mass of components other than the electroconductiveparticles in the curable resin composition.
 7. The semiconductor devicemanufacturing method according to claim 5, wherein the curable resincomposition further includes a thermoplastic resin.
 8. The semiconductordevice manufacturing method according to claim 5, wherein the curableresin composition further includes a polymerizable monomer and apolymerization initiator.
 9. The semiconductor device manufacturingmethod according to claim 1, wherein the temporary fixation materiallayer has a light absorbing layer that generates heat upon absorbinglight.
 10. The semiconductor device manufacturing method according toclaim 9, wherein the light absorbing layer is formed by sputtering orvacuum vapor deposition.
 11. A curable resin composition for a temporaryfixation material for temporarily fixing a semiconductor member to asupporting member, the curable resin composition for a temporaryfixation material including electroconductive particles that generateheat upon absorbing light.
 12. The curable resin composition for atemporary fixation material according to claim 11, wherein a content ofthe electroconductive particles is 30 to 90 parts by mass with respectto a total amount of 100 parts by mass of components other than theelectroconductive particles in the curable resin composition for atemporary fixation material.
 13. The curable resin composition for atemporary fixation material according to claim 11, further comprising athermoplastic resin.
 14. The curable resin composition for a temporaryfixation material according to claim 13, further comprising apolymerizable monomer and a polymerization initiator.
 15. A film for atemporary fixation material for temporarily fixing a semiconductormember to a supporting member, the film for a temporary fixationmaterial comprising the curable resin composition for a temporaryfixation material according to claim
 11. 16. A laminated film for atemporary fixation material for temporarily fixing a semiconductormember to a supporting member, the laminated film for a temporaryfixation material comprising a light absorbing layer that generates heatupon absorbing light.
 17. The semiconductor device manufacturing methodaccording to claim 9, wherein the temporary fixation material layerfurther has a resin cured product layer including a cured product of acurable resin component.
 18. The laminated film for a temporary fixationmaterial according to claim 16, further comprising a resin layerincluding a curable resin component.